High-Power InGaN-Based LED With Tunneling-Junction-Induced Two-Dimensional Electron Gas at AlGaN/GaN Heterostructure

Author

Lee, Jae-Hoon ; Lee, Jung-Hee

Author_Institution

GaN Power Res. Group, Samsung LED Co., Ltd., Suwon, South Korea

Volume

58

Issue

9

fYear

2011

Firstpage

3058

Lastpage

3064

Abstract

We demonstrate high-performance InGaN-based light-emitting diodes (LEDs) with tunneling-junction-induced 2-D electron gas (2-DEG) at n-AlGaN/GaN heterostructure, inserted in the middle of the p⁺⁺-GaN contact layer of a conventional LED structure. The LED with a 2-DEG layer exhibits about 20% enhancement in output power, as compared with that of the conventional LED at 350 mA, which is believed to be due to enhanced hole-injection efficiency and better lateral current spreading by the presence of 2-DEG at the AlGaN/GaN heterostructure.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; tunnel diodes; two-dimensional electron gas; wide band gap semiconductors; 2-DEG; AlGaN-GaN; InGaN; current 350 mA; high-performance light-emitting diodes; high-power LED; tunneling-junction-induced 2D electron gas; tunneling-junction-induced two-dimensional electron gas; Aluminum gallium nitride; Electrostatic discharge; Gallium nitride; Junctions; Light emitting diodes; Power generation; Tunneling; 2-D electron gas (2-DEG); AlGaN/GaN; InGaN; heterostructure; light-emitting diode (LED); tunneling junction;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2159119

Filename

5937047