DocumentCode :
1264128
Title :
Correction to "Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer" [Jul 12 994-996]
Author :
Zhang, Yan-Yu ; Yin, Yi-An
Author_Institution :
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong
Volume :
33
Issue :
9
fYear :
2012
Firstpage :
1321
Lastpage :
1321
Abstract :
In the above paper [ibid., vol. 33, no. 7, pp. 994??996, Jul. 2012], the affiliation of the primary author Yun-Yan Zhang was misstated and is corrected here. The notice regarding the primary author\´s research is also corrected. The second author (Xue-Liang Zhu) and the last author (Jun Ma) of the original paper are now removed from the byline as well. The byline should read as follows: Yun-Yan Zhang and Yi-An Yin. Citations to the work should now be Y.-Y. Zhang and Y.-A. Yin, "Performance enhancement of near- UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer," IEEE Electron Devices Lett., vol. 33, no. 7, pp. 994-996, Jul. 2012.
Keywords :
Aluminum gallium nitride; Gallium nitride; Light emitting diodes; Superlattices;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2211514
Filename :
6268316
Link To Document :
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