• DocumentCode
    1264128
  • Title

    Correction to "Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer" [Jul 12 994-996]

  • Author

    Zhang, Yan-Yu ; Yin, Yi-An

  • Author_Institution
    Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong
  • Volume
    33
  • Issue
    9
  • fYear
    2012
  • Firstpage
    1321
  • Lastpage
    1321
  • Abstract
    In the above paper [ibid., vol. 33, no. 7, pp. 994??996, Jul. 2012], the affiliation of the primary author Yun-Yan Zhang was misstated and is corrected here. The notice regarding the primary author\´s research is also corrected. The second author (Xue-Liang Zhu) and the last author (Jun Ma) of the original paper are now removed from the byline as well. The byline should read as follows: Yun-Yan Zhang and Yi-An Yin. Citations to the work should now be Y.-Y. Zhang and Y.-A. Yin, "Performance enhancement of near- UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer," IEEE Electron Devices Lett., vol. 33, no. 7, pp. 994-996, Jul. 2012.
  • Keywords
    Aluminum gallium nitride; Gallium nitride; Light emitting diodes; Superlattices;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2211514
  • Filename
    6268316