• DocumentCode
    1264141
  • Title

    An Abstract Fault Model for NAND Flash Memory

  • Author

    Yun, Ji Hyuck ; Yoon, Jin Hyuk ; Nam, Eyee Hyun ; Min, Sang Lyul

  • Author_Institution
    Sch. of Comput. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea
  • Volume
    4
  • Issue
    4
  • fYear
    2012
  • Firstpage
    86
  • Lastpage
    89
  • Abstract
    We present an abstract fault model for NAND flash memory that describes precisely the effects of various faults during a flash operation. The abstract model is intended to be used to reason about fault-related correctness of key modules of flash memory management software such as a flash translation layer (FTL). We also introduce the concept of “SAO-compliance” to raise awareness about fault-related vulnerabilities of current flash memory management software and to promote much needed research to fix them.
  • Keywords
    NAND circuits; fault diagnosis; flash memories; storage management; FTL; NAND flash memory; SAO-compliance; abstract fault model; fault-related correctness; fault-related vulnerability; flash memory management software; flash operation; flash translation layer; Flash memory; Modeling; Reliability; Fault model; flash memory; flash translation layer (FTL); reliability;
  • fLanguage
    English
  • Journal_Title
    Embedded Systems Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1943-0663
  • Type

    jour

  • DOI
    10.1109/LES.2012.2213235
  • Filename
    6268318