DocumentCode
1264141
Title
An Abstract Fault Model for NAND Flash Memory
Author
Yun, Ji Hyuck ; Yoon, Jin Hyuk ; Nam, Eyee Hyun ; Min, Sang Lyul
Author_Institution
Sch. of Comput. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea
Volume
4
Issue
4
fYear
2012
Firstpage
86
Lastpage
89
Abstract
We present an abstract fault model for NAND flash memory that describes precisely the effects of various faults during a flash operation. The abstract model is intended to be used to reason about fault-related correctness of key modules of flash memory management software such as a flash translation layer (FTL). We also introduce the concept of “SAO-compliance” to raise awareness about fault-related vulnerabilities of current flash memory management software and to promote much needed research to fix them.
Keywords
NAND circuits; fault diagnosis; flash memories; storage management; FTL; NAND flash memory; SAO-compliance; abstract fault model; fault-related correctness; fault-related vulnerability; flash memory management software; flash operation; flash translation layer; Flash memory; Modeling; Reliability; Fault model; flash memory; flash translation layer (FTL); reliability;
fLanguage
English
Journal_Title
Embedded Systems Letters, IEEE
Publisher
ieee
ISSN
1943-0663
Type
jour
DOI
10.1109/LES.2012.2213235
Filename
6268318
Link To Document