GaN-Based LEDs With a Chirped Multiquantum Barrier Structure

Author

Lin, Yu-Yao ; Chuang, Ricky W. ; Chang, Shoou-Jinn ; Li, Shuguang ; Jiao, Zhi-Yong ; Ko, Tsun-Kai ; Hon, S.J. ; Liu, C.H.

Author_Institution

Dept. of Photonics, Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

24

Issue

18

fYear

2012

Firstpage

1600

Lastpage

1602

Abstract

We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs), namely, a conventional AlGaN, a uniform multiquantum barrier (UMQB), and a chirped multiquantum barrier (CMQB). On the administration of 20 mA injection current, the corresponding LED output powers measured were 27.5, 27.2, and 25.4 mW for CMQB LED, UMQB LED, and LED, respectively, with a conventional AlGaN EBL. It was also found that the LED with CMQB EBL exhibited a significantly lower drooping effect and a smaller forward bias as compared with LEDs with a conventional AlGaN EBL and UMQB EBL.

Keywords

III-V semiconductors; aluminium compounds; electrons; gallium compounds; light emitting diodes; wide band gap semiconductors; AlGaN; CMQB LED; GaN; UMQB LED; blue light-emitting diodes; chirped multiquantum barrier structure; current 20 mA; drooping effect; electron blocking layers; forward bias; power 25.4 mW; power 27.2 mW; power 27.5 mW; uniform multiquantum barrier; Aluminum gallium nitride; Current measurement; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Semiconductor device measurement; Chirped multiquantum barrier (CMQB); GaN; droop; light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2210541

Filename

6268320