Title : 
Ultrafast Gain and Refractive Index Dynamics in AlInAs/AlGaAs Quantum Dot Based Semiconductor Optical Amplifiers Operating at 800 nm
         
        
            Author : 
Pulka, Jaroslaw ; Piwonski, Tomasz ; Huyet, Guillaume ; Houlihan, John ; Barbay, Sylvain ; Martinez, Anthony ; Merghem, Kamel ; Lemaître, Aristide ; Ramdane, Abderrahim ; Kuszelewicz, Robert
         
        
            Author_Institution : 
Tyndall Nat. Inst., Cork, Ireland
         
        
        
        
        
        
        
            Abstract : 
The ultrafast gain and refractive index dynamics in AlInAs/AlGaAs quantum dot (QD) based semiconductor optical amplifiers is reported. Measurements in the forward bias regime indicate a complete gain recovery timescale of ~ 5 ps , while the phase dynamics occur over a much longer timescale. At increased pump powers, the impact of nonresonant carriers created by two-photon absorption is visible as an increased injection in both gain and phase dynamics. Reverse-biased measurements reveal a similar behavior to previous measurements on InAs QD devices.
         
        
            Keywords : 
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical pumping; quantum dot lasers; refractive index; semiconductor optical amplifiers; semiconductor quantum dots; two-photon spectra; AlInAs-AlGaAs; forward bias regime; nonresonant carriers; phase dynamics; pump power; quantum dot; refractive index dynamics; reverse biased measurements; semiconductor optical amplifiers; two-photon absorption; ultrafast gain dynamics; Absorption; Delay; Gain; Optical waveguides; Quantum dot lasers; Semiconductor device measurement; Transient analysis; Optical amplifiers; optical materials; semiconductor device measurements;
         
        
        
            Journal_Title : 
Quantum Electronics, IEEE Journal of
         
        
        
        
        
            DOI : 
10.1109/JQE.2011.2155034