Title :
InP/InGaAs uni-travelling-carrier photodiode with 220 GHz bandwidth
Author :
Ito, H. ; Furuta, T. ; Kodama, S. ; Watanabe, N. ; Ishibashi, T.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
fDate :
9/2/1999 12:00:00 AM
Abstract :
An InP/InGaAs uni-travelling-carrier photodiode with a record 3 dB bandwidth of 220 GHz at a wavelength of 1.55 μm has been fabricated. The estimated average electron velocity in the depletion region is >2.3×107 cm/s, which indicates that nonequilibrium electron transport is taking place in the collection layer
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodetectors; photodiodes; 1.55 micron; 220 GHz; InP-InGaAs; collection layer; depletion layer; fabrication; nonequilibrium electron transport; ultrafast photodetectors; uni-travelling-carrier photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991043
