• DocumentCode
    1264763
  • Title

    InP/InGaAs uni-travelling-carrier photodiode with 220 GHz bandwidth

  • Author

    Ito, H. ; Furuta, T. ; Kodama, S. ; Watanabe, N. ; Ishibashi, T.

  • Author_Institution
    NTT Photonics Labs., Kanagawa, Japan
  • Volume
    35
  • Issue
    18
  • fYear
    1999
  • fDate
    9/2/1999 12:00:00 AM
  • Firstpage
    1556
  • Lastpage
    1557
  • Abstract
    An InP/InGaAs uni-travelling-carrier photodiode with a record 3 dB bandwidth of 220 GHz at a wavelength of 1.55 μm has been fabricated. The estimated average electron velocity in the depletion region is >2.3×107 cm/s, which indicates that nonequilibrium electron transport is taking place in the collection layer
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; photodetectors; photodiodes; 1.55 micron; 220 GHz; InP-InGaAs; collection layer; depletion layer; fabrication; nonequilibrium electron transport; ultrafast photodetectors; uni-travelling-carrier photodiode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991043
  • Filename
    802797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1264763