Title :
Optical slow-wave resonant modulation in electro-optic GaAs/AlGaAs modulators
Author :
Shaw, N. ; Stewart, W.J. ; Heaton, J. ; Wight, D.R.
Author_Institution :
Marconi Mater. Technol., Towcester, UK
fDate :
9/2/1999 12:00:00 AM
Abstract :
A new type of resonant optical intensity modulator has been developed by incorporating an optical slow-wave structure into a GaAs/AlGaAs Mach-Zehnder waveguide modulator. The first experimental results demonstrate improvements in the efficiency by factors of up to 2.9 at the resonant wavelength. The lowest switching voltage, Vπ , is 4.5 V
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; electro-optical modulation; gallium arsenide; integrated optoelectronics; intensity modulation; optical waveguides; slow wave structures; 4.5 V; GaAs-AlGaAs; Mach-Zehnder waveguide modulator; OEIC; electro-optic modulators; optical slow-wave resonant modulation; optical slow-wave structure; resonant optical intensity modulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991035
