DocumentCode :
1264803
Title :
Realisation of highly efficient 850 nm top emitting resonant cavity light emitting diodes
Author :
Bockstaele, R. ; Derluyn, J. ; Sys, C. ; Verstuyft, S. ; Moerman, I. ; Van Daele, P. ; Baets, R.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Belgium
Volume :
35
Issue :
18
fYear :
1999
fDate :
9/2/1999 12:00:00 AM
Firstpage :
1564
Lastpage :
1565
Abstract :
Highly efficient top emitting 850 nm resonant cavity LEDs (RCLEDs) with and without selectively oxidised current windows have been realised and compared. The oxidised RCLEDs have an increased efficiency, due to a larger carrier injection efficiency. The best devices show a 14% overall quantum efficiency, and a voltage drop of 1.8 V at 3 mA drive current
Keywords :
light emitting diodes; optical resonators; 14 percent; 850 nm; carrier injection efficiency; quantum efficiency; selectively oxidised current window; top emitting resonant cavity light emitting diode;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19991052
Filename :
802803
Link To Document :
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