DocumentCode
1264882
Title
LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology
Author
Ponton, D. ; Knoblinger, G. ; Roithmeier, A. ; Cernoia, F. ; Tiebout, M. ; Fulde, M. ; Palestri, P.
Author_Institution
DIEGM, Univ. of Udine, Udine, Italy
Volume
58
Issue
8
fYear
2011
Firstpage
467
Lastpage
471
Abstract
In this brief, a conventional LC voltage-controlled oscillator (LC-VCO) for Global System for Mobile Communications 900 applications is implemented in a 32-nm CMOS technology. The transition to 32-nm technology represents a big step from the technological point of view, mainly due to the introduction of high-κ dielectrics. In spite of the considered ultrascaled technology, the measured performance is aligned with recently published conventional LC-VCOs in the gigahertz range. The robustness of the VCO versus temperature and supply variation is experimentally characterized and analyzed in detail by means of circuit simulations.
Keywords
CMOS analogue integrated circuits; MMIC oscillators; cellular radio; field effect MMIC; low-power electronics; voltage-controlled oscillators; GSM 900 applications; LC-VCO; frequency 3.3 GHz to 4 GHz; high-κ dielectrics; low-power CMOS technology; size 32 nm; ultrascaled technology; voltage-controlled oscillator; CMOS integrated circuits; CMOS technology; Noise; Temperature measurement; Tuning; Varactors; Voltage-controlled oscillators; 32-nm; $LC$ voltage-controlled oscillator (LC-VCO); $1/f$ noise; Flicker noise; Global System for Mobile Communications (GSM); high-$kappa$ ; metal gate; oscillator; phase noise (PN); radio frequency (RF) CMOS;
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2011.2160033
Filename
5940214
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