DocumentCode :
1264882
Title :
LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology
Author :
Ponton, D. ; Knoblinger, G. ; Roithmeier, A. ; Cernoia, F. ; Tiebout, M. ; Fulde, M. ; Palestri, P.
Author_Institution :
DIEGM, Univ. of Udine, Udine, Italy
Volume :
58
Issue :
8
fYear :
2011
Firstpage :
467
Lastpage :
471
Abstract :
In this brief, a conventional LC voltage-controlled oscillator (LC-VCO) for Global System for Mobile Communications 900 applications is implemented in a 32-nm CMOS technology. The transition to 32-nm technology represents a big step from the technological point of view, mainly due to the introduction of high-κ dielectrics. In spite of the considered ultrascaled technology, the measured performance is aligned with recently published conventional LC-VCOs in the gigahertz range. The robustness of the VCO versus temperature and supply variation is experimentally characterized and analyzed in detail by means of circuit simulations.
Keywords :
CMOS analogue integrated circuits; MMIC oscillators; cellular radio; field effect MMIC; low-power electronics; voltage-controlled oscillators; GSM 900 applications; LC-VCO; frequency 3.3 GHz to 4 GHz; high-κ dielectrics; low-power CMOS technology; size 32 nm; ultrascaled technology; voltage-controlled oscillator; CMOS integrated circuits; CMOS technology; Noise; Temperature measurement; Tuning; Varactors; Voltage-controlled oscillators; 32-nm; $LC$ voltage-controlled oscillator (LC-VCO); $1/f$ noise; Flicker noise; Global System for Mobile Communications (GSM); high-$kappa$; metal gate; oscillator; phase noise (PN); radio frequency (RF) CMOS;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2011.2160033
Filename :
5940214
Link To Document :
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