• DocumentCode
    1264882
  • Title

    LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology

  • Author

    Ponton, D. ; Knoblinger, G. ; Roithmeier, A. ; Cernoia, F. ; Tiebout, M. ; Fulde, M. ; Palestri, P.

  • Author_Institution
    DIEGM, Univ. of Udine, Udine, Italy
  • Volume
    58
  • Issue
    8
  • fYear
    2011
  • Firstpage
    467
  • Lastpage
    471
  • Abstract
    In this brief, a conventional LC voltage-controlled oscillator (LC-VCO) for Global System for Mobile Communications 900 applications is implemented in a 32-nm CMOS technology. The transition to 32-nm technology represents a big step from the technological point of view, mainly due to the introduction of high-κ dielectrics. In spite of the considered ultrascaled technology, the measured performance is aligned with recently published conventional LC-VCOs in the gigahertz range. The robustness of the VCO versus temperature and supply variation is experimentally characterized and analyzed in detail by means of circuit simulations.
  • Keywords
    CMOS analogue integrated circuits; MMIC oscillators; cellular radio; field effect MMIC; low-power electronics; voltage-controlled oscillators; GSM 900 applications; LC-VCO; frequency 3.3 GHz to 4 GHz; high-κ dielectrics; low-power CMOS technology; size 32 nm; ultrascaled technology; voltage-controlled oscillator; CMOS integrated circuits; CMOS technology; Noise; Temperature measurement; Tuning; Varactors; Voltage-controlled oscillators; 32-nm; $LC$ voltage-controlled oscillator (LC-VCO); $1/f$ noise; Flicker noise; Global System for Mobile Communications (GSM); high-$kappa$; metal gate; oscillator; phase noise (PN); radio frequency (RF) CMOS;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2011.2160033
  • Filename
    5940214