• DocumentCode
    1264915
  • Title

    A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications

  • Author

    Shrivastava, Mayank ; Gossner, Harald ; Rao, V. Ramgopal

  • Author_Institution
    Intel Mobile Commun. Gmbh, Munich, Germany
  • Volume
    33
  • Issue
    10
  • fYear
    2012
  • Firstpage
    1432
  • Lastpage
    1434
  • Abstract
    A novel drain-extended FinFET device is proposed in this letter for high-voltage and high-speed applications. A 2 × better RON versus VBD tradeoff is shown from technology computer-aided design simulations for the proposed device, when compared with a conventional device option. Moreover, a device design and optimization guideline has been provided for the proposed device.
  • Keywords
    MOSFET; electronic design automation; high-speed techniques; high-voltage techniques; optimisation; conventional device option; drain-extended FinFET device design; high-voltage high-speed applications; optimization guideline; technology computer-aided design simulations; CMOS integrated circuits; FinFETs; Logic gates; Optimization; P-n junctions; Performance evaluation; System-on-a-chip; Drain extended; FinFET; high voltage (HV); system-on-a-chip (SoC);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2206791
  • Filename
    6269049
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1264915