Title :
Carbon-doped base GaAs-AlGaAs HBT´s grown by MOMBE and MOCVD regrowth
Author :
Hobson, W.S. ; Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Fullowan, T.R. ; Lothian, J. ; Jordan, A.S. ; Lunardi, Leda M.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
High-quality GaAs-AlGaAs heterojunction bipolar transistors (HBTs) in which the carbon-doped base layers (p=10/sup 10/-10/sup 20/ cm/sup -3/, 400-800 AA thick) and Sn-doped collector and subcollector layers are grown by metalorganic molecular-beam epitaxy (MOMBE) and a subsequent regrowth using metalorganic chemical vapor deposition (MOCVD) is used to provide the n/sup +/ AlGaAs emitter and GaAs/InGaAs contact layers are discussed. A current gain of 20 was obtained for a base doping of 10/sup 19/ cm/sup -3/ (800 AA thick) in a 90- mu m-diameter device, with ideality factors of 1.0 and 1.4 for the base-collector and emitter-base junctions, respectively, demonstrating the excellent regrowth-interface quality. For a base doping of 10/sup 20/ cm/sup -3/ (400 AA thick), the current gain decreased to 8.<>
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; semiconductor growth; vapour phase epitaxial growth; GaAs-AlGaAs; GaAs-InGaAs contact layers; GaAs:C; GaAs:Sn; HBTs; MOCVD regrowth; MOMBE; base collector junction; base doping; current gain; emitter-base junctions; heterojunction bipolar transistors; ideality factors; metalorganic molecular-beam epitaxy; regrowth-interface quality; Carbon dioxide; Chemicals; Doping; Gallium arsenide; Heat treatment; Heterojunction bipolar transistors; Logic devices; MOCVD; Temperature; Zinc;
Journal_Title :
Electron Device Letters, IEEE
