Title :
DC and RF characteristics of AlN/GaN doped channel heterostructure field effect transistor
Author :
Daumiller, I. ; Schmid, P. ; Kohn, E. ; Kirchner, C. ; Kamp, M. ; Ebeling, K.J. ; Pond, L.L. ; Weitzel, C.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
fDate :
9/2/1999 12:00:00 AM
Abstract :
First small signal, large signal and RF power characteristics of experimental 3 μm gatelength AlN/GaN devices between RT and 200°C are reported. A high drain breakdown of 42 V and the absence of dispersion effects indicate that this challenging heterostructure is indeed attractive for the development of high power/high speed devices
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; power field effect transistors; semiconductor device breakdown; 20 to 200 C; 3 micron; 42 V; AlN-GaN; AlN/GaN doped channel heterostructure field effect transistor; DC characteristics; RF characteristics; drain breakdown; high power device; high speed device; large signal characteristics; small signal characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991041
