Title :
Simulation of soft recovery in Si pin rectifiers with ultra-shallow p+ emitters
Author :
Kub, F.J. ; Ancona, M.G. ; Hobart, K.D.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
9/2/1999 12:00:00 AM
Abstract :
Ultra-shallow (<500 Å) p+-emitters in Si pin rectifiers are shown via numerical simulation to reduce the need for lifetime killing in order to obtain soft recovery. This benefit is especially pronounced at elevated operating temperatures
Keywords :
elemental semiconductors; silicon; solid-state rectifiers; Si; Si pin rectifier; elevated temperature; lifetime killing; numerical simulation; soft recovery; ultra-shallow p+ emitter;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991087
