Efficient GaN photocathodes for low-level ultraviolet signal detection

Author

Shahedipour, Fatemeh S. ; Ulmer, Melville P. ; Wessels, Bruce W. ; Joseph, Charles L. ; Nihashi, Tokuaki

Author_Institution

CESTM, State Univ. of New York, Albany, NY, USA

Volume

38

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

333

Lastpage

335

Abstract

We report on the properties of GaN-based photocathodes for low light ultraviolet (UV) signal detection. Cesiated Mg-doped p-type GaN layers with 1-μm thickness were used as photocathode materials. Quantum efficiency (QE) as measured on a completed device showed values as high as 30% at 200 nm. A UV/visible rejection ratio of three orders of magnitude at 500 nm was observed. A net increase in the QE was also observed with increasing conductivity of the material

Keywords

III-V semiconductors; caesium; dark conductivity; electron affinity; gallium compounds; magnesium; photocathodes; photodetectors; ultraviolet detectors; wide band gap semiconductors; 1 micron; 200 nm; 500 nm; GaN:Mg; GaN:Mg-Cs; UV/visible rejection ratio; cesiated Mg-doped p-type GaN layers; conductivity; efficient GaN photocathodes; low-level ultraviolet signal detection; phototube; quantum efficiency; solar-blind detector; Astronomy; Cathodes; Conducting materials; Dark current; Detectors; Electrons; Gallium nitride; Photodetectors; Signal detection; Surface treatment;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.992544

Filename

992544