Title :
Internal cooling in a semiconductor laser diode
Author :
Pipe, K.P. ; Ram, R.J. ; Shakouri, A.
Author_Institution :
Res. Lab. of Electron., MIT, Cambridge, MA, USA
fDate :
4/1/2002 12:00:00 AM
Abstract :
A thermal model of a diode laser structure is developed which includes a bipolar thermoelectric term not included in previous models. It is shown that heterostructure band offsets can be chosen so that there are thermoelectric cooling sources near the active region; this method of cooling is internal to the device itself, as opposed to temperature stabilization schemes which employ an external cooler. A novel laser structure is proposed that is capable of internal cooling in the Ga/sub 1-x/In/sub x/As/sub y/Sb/sub 1-y/-GaSb material system with /spl lambda/ = 2.64 μm.
Keywords :
III-V semiconductors; Peltier effect; cooling; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor device models; thermionic conversion; thermoelectric conversion; 2.64 micron; GaInAsSb-GaSb; Joule heating; Peltier coefficient; QW interfaces; SCH laser; active region; bipolar thermoelectric term; contact resistance; device overheating; diode laser structure; electrothermal effects; heterostructure band offsets; injection current internally cooled light emitter; internal cooling; nonradiative recombination; photothermal effects; thermal model; thermionic emission; thermionic energy conversion; thermoelectric energy conversion; Carrier confinement; Cooling; Diode lasers; Heat sinks; Heat transfer; Optical materials; Semiconductor lasers; Temperature; Thermoelectric devices; Thermoelectricity;
Journal_Title :
Photonics Technology Letters, IEEE
