1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells

Author

Akiyama, T. ; Georgiev, N. ; Mozume, T. ; Yoshida, H. ; Gopal, A.V. ; Wada, O.

Author_Institution

Femtosecond Technol. Res. Assoc., Tsukuba, Japan

Volume

14

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

495

Lastpage

497

Abstract

We report on the first all-optical switching operation of intersubband absorption at an optical communication wavelength (/spl sim/1.55 μm). The 1.55-μm intersubband absorption was achieved by InGaAs-AlAs-AlAsSb coupled quantum wells. A switching operation on an ultrafast signal (equivalent to 1 THz) was successfully demonstrated with a control pulse energy as low as 27 pJ.

Keywords

III-V semiconductors; absorption coefficients; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; light transmission; nonlinear optics; optical switches; quantum well devices; semiconductor quantum wells; 1 THz; 1.55 micron; 1.55-/spl mu/m picosecond all-optical switching; 27 pJ; InGaAs-AlAs-AlAsSb; InGaAs-AlAs-AlAsSb coupled quantum wells; OTDM; WDM networks; control pulse energy; intersubband absorption; optical communication wavelength; optical time-division-multiplexed signals; ultrafast signal; Absorption; Communication switching; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical pumping; Optical waveguides; Optical wavelength conversion; Ultrafast optics; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.992589

Filename

992589