Title :
All-optical AND gate implementation using cross-polarization modulation in a semiconductor optical amplifier
Author :
Soto, H. ; Díaz, C.A. ; Topomondzo, T. ; Erasme, D. ; Schares, L. ; Guekos, G.
Author_Institution :
Div. de Fisica Aplicada, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Baja California, Mexico
fDate :
4/1/2002 12:00:00 AM
Abstract :
We demonstrate experimentally a new design for an all-optical AND gate operating in the gigahertz regime. The efficiency of this effect was estimated by measuring the conversion coefficients C/sub TE/TM/ and C/sub TM/TE/ indicating the TE to TM mode conversion and vice versa when the amplifier is perturbed with a wavelength tunable control beam. The all-optical gate here described differ from others developed before using semiconductor optical amplifiers in its ability to operate on nondegenerate input signals and to produce an output signal with an independent wavelength from the wavelengths of the input signals.
Keywords :
light polarisation; nonlinear optics; optical design techniques; optical logic; optical modulation; optical switches; semiconductor optical amplifiers; TE to TM mode conversion; TM to TE mode conversion; all-optical AND gate implementation; conversion coefficients; cross-polarization modulation; design; efficiency; gigahertz regime; independent wavelength; nondegenerate input signals; output signal; photonic switching nodes; semiconductor optical amplifier; wavelength tunable control beam; Nonlinear optics; Optical amplifiers; Optical devices; Optical interferometry; Optical modulation; Optical polarization; Optical waveguides; Probes; Pulse amplifiers; Semiconductor optical amplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
