Title :
High-speed monolithically integrated silicon optical receiver fabricated in 130-nm CMOS technology
Author :
Csutak, S.M. ; Schaub, J.D. ; Wu, W.E. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
4/1/2002 12:00:00 AM
Abstract :
A monolithically integrated silicon optical receiver fabricated in a 130-nm unmodified complementary metal-oxide-semiconductor process flow on 2-μm-thick silicon-on-insulator substrates is reported. The quantum efficiency of the photodetectors was /spl sim/10 % at 850 nm. Sensitivities of -19, -16.6, -15.4, and -10.9 dBm were obtained for bit rates of 1, 2, 3.125, and 5 Gb/s, respectively, at a bit-error rate of 10/sup -9/. Operation up to 8 Gb/s was achieved. The transimpedance gain of the receivers was in the range 46.3 dB to 31 dB /spl Omega/, and the total dissipated power was between 10 and 35 mW depending on the circuit design.
Keywords :
CMOS integrated circuits; integrated optoelectronics; optical fabrication; optical receivers; photodetectors; sensitivity; silicon; substrates; 10 to 35 mW; 130 nm; 5 Gbit/s; 8 Gbit/s; 850 nm; CMOS technology; Si; Si high-speed monolithically integrated optical receiver; bit rates; circuit design; optical receivers; photodetectors; quantum efficiency; silicon-on-insulator substrates; total dissipated power; transimpedance gain; unmodified complementary metal-oxide-semiconductor process; Bandwidth; Bit rate; CMOS technology; Costs; Microelectronics; Optical amplifiers; Optical receivers; Photodetectors; Photodiodes; Silicon on insulator technology;
Journal_Title :
Photonics Technology Letters, IEEE
