DocumentCode
1265502
Title
Two-dimensional photonic crystals in macroporous silicon: from mid-infrared (10 μm) to telecommunication wavelengths (1.3-1.5 μm)
Author
Rowson, S. ; Chelnokov, A. ; Lourtioz, J.-M.
Author_Institution
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
Volume
17
Issue
11
fYear
1999
fDate
11/1/1999 12:00:00 AM
Firstpage
1989
Lastpage
1995
Abstract
We present a detailed study of two-dimensional (2D) photonic crystals based on macroporous silicon technology, showing a broad range of wavelengths accessible for applications with this material. In this work, we have reached 1.55 μm, this certainly represents a decisive issue for this technology. First, the reflection performances of a hexagonal and a triangular lattice of air holes are compared. The triangular lattice reduces technological requirements because the complete photonic bandgap (PBG) results from the overlap of broader forbidden bands of lower order. Second, a combined experimental and theoretical study is presented of the reflection properties of a 2D photonic crystal in a three-dimensional (3D) optical environment. This reveals the critical parameters that can degrade the performances of such 2-D structures. Reflection coefficients up to 98% are obtained with optical quality interfaces. Finally, a complete PBG centered at 1.55 μm is demonstrated with a submicrometer period triangular lattice defined by holographic lithography. The influence of the air filling factor on the band position and the interface quality is analyzed by reflection measurements. The overall results show the high flexibility of the macroporous silicon technology and its applicability to integrated optics at telecommunication wavelengths
Keywords
elemental semiconductors; infrared spectra; integrated optics; photonic band gap; porous semiconductors; reflectivity; silicon; 1.3 to 1.5 mum; 1.55 mum; 10 mum; 2D photonic crystals; Si; air filling factor; band position; hexagonal air hole lattice; holographic lithography; integrated optics; interface quality; macroporous silicon; photonic bandgap; reflection coefficients; telecommunication wavelengths; triangular air hole lattice; Crystalline materials; Degradation; Holographic optical components; Holography; Lattices; Lithography; Optical reflection; Photonic band gap; Photonic crystals; Silicon;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.802985
Filename
802985
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