Title :
Strong Purcell effect for InAs quantum boxes in three-dimensional solid-state microcavities
Author :
Gérard, Jean-Michel ; Gayral, Bruno
Author_Institution :
France Telecom, CNET, Bagneux, France
fDate :
11/1/1999 12:00:00 AM
Abstract :
A strong enhancement of the spontaneous emission rate (Purcell effect) has been observed for self-assembled InAs/GaAs quantum boxes inserted in GaAs-based pillar microcavities (×5) and microdisks (×15) using time-resolved as well as c.w. photoluminescence experiments. We show that the magnitude of the Purcell effect can be quantitatively understood by considering both the Purcell figure of merit Fp of such cavities (Fp≫1) and the spatial/spectral distribution of the inhomogeneous collection of atom-like emitters. These results open the way to the development of single-photon devices such as photon-guns or photon-turnstiles, able to emit photons one-by-one in a deterministic way
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; spontaneous emission; time resolved spectra; CW photoluminescence; GaAs-based pillar microcavities; InAs quantum boxes; InAs-GaAs; Purcell figure of merit; microdisks; photon-guns; photon-turnstiles; self-assembled InAs/GaAs quantum boxes; single-photon devices; spatial/spectral distribution; spontaneous emission rate; strong Purcell effect; three-dimensional solid-state microcavities; time-resolved photoluminescence; Electrodynamics; Gallium arsenide; Microcavities; Optical coupling; Photoluminescence; Quantum dots; Quantum mechanics; Radiative recombination; Solid state circuits; Spontaneous emission;
Journal_Title :
Lightwave Technology, Journal of
