DocumentCode :
1265647
Title :
Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns
Author :
Baba, Toshihiko ; Inoshita, Kyoji ; Tanaka, Hiroko ; Yonekura, Jun ; Ariga, Maiko ; Matsutani, Akihiro ; Miyamoto, Tomoyuki ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
Volume :
17
Issue :
11
fYear :
1999
fDate :
11/1/1999 12:00:00 AM
Firstpage :
2113
Lastpage :
2120
Abstract :
This paper experimentally demonstrates the strong enhancement of light extraction efficiency in two-dimensionally arranged microcolumns. They were designed like a honeycomb photonic crystal and fabricated into GaInAsP-InP wafers by using the inductively coupled plasma etching. For the laterally directed light passing through the microcolumns, peculiar transmission characteristics were observed, which could be explained by the Bragg reflection theory, namely, the photonic bandgap (PBG). The measurement of spontaneous lifetime showed that the internal efficiency in the microcolumns was reduced by the surface recombination at sidewalls. In contrast, the light extraction efficiency evaluated from the measured photoluminescence intensity, and the internal efficiency was more than ten times that for a planar wafer. This was thought to be due to the expanded escape cone of internal light by the low effective refractive index, and also due to the strong diffraction and scattering of laterally directed light, which corresponds to the second-order Bragg condition. Such effects are expected not only in photonic crystals but also in some disordered structures. We expect this structure to allow a high-efficiency light-emitting diode (LED), since electronic elements needed for current injection devices can be added independently of the effects
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light diffraction; light emitting diodes; light scattering; light transmission; photoluminescence; photonic band gap; refractive index; spectral line intensity; spontaneous emission; sputter etching; Bragg reflection theory; GaInAsP 2-D-arranged microcolumns; GaInAsP-InP; GaInAsP-InP wafers; LED; current injection devices; disordered structures; high-efficiency light-emitting diode; honeycomb photonic crystal; inductively coupled plasma etching; internal efficiency; laterally directed light; light extraction efficiency; low effective refractive index; photoluminescence intensity; photonic bandgap; second-order Bragg condition; spontaneous lifetime; strong enhancement; surface recombination; transmission characteristics; two-dimensionally arranged microcolumns; Couplings; Etching; Light emitting diodes; Optical reflection; Photonic band gap; Photonic crystals; Plasma applications; Plasma measurements; Plasma properties; Spontaneous emission;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.803001
Filename :
803001
Link To Document :
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