DocumentCode :
1265798
Title :
A Dual-Band Parallel Doherty Power Amplifier for Wireless Applications
Author :
Grebennikov, Andrei ; Wong, James
Author_Institution :
Bell Labs., Alcatel-Lucent, Dublin, Ireland
Volume :
60
Issue :
10
fYear :
2012
Firstpage :
3214
Lastpage :
3222
Abstract :
In this paper, a novel dual-band transmission-line parallel Doherty amplifier architecture for active antenna arrays and base-station applications in next-generation communication systems is presented. The carrier and peaking amplifiers using GaN HEMT Cree CGH40010P devices are designed based on the reactance compensation technique to provide optimum Class-E impedance seen by the device output at the fundamental frequency across the wide frequency range achieving drain efficiencies over 73% across the frequency range from 1.7 to 2.7 GHz. In a single-carrier WCDMA operation mode with a peak-to-average ratio of 6.5 dB, high drain efficiencies of 40%-45% can be achieved at an average output power of 39 dBm with an ACLR1 of about -30 dBc at center bandwidth frequencies of 2.14 and 2.655 GHz.
Keywords :
active antenna arrays; code division multiple access; high electron mobility transistors; power amplifiers; radio networks; Class-E impedance; GaN HEMT Cree CGH40010P devices; active antenna arrays; base-station applications; drain efficiencies; dual-band parallel Doherty power amplifier; dual-band transmission-line parallel Doherty amplifier architecture; next-generation communication systems; peaking amplifiers; reactance compensation; single-carrier WCDMA operation mode; wireless applications; Bandwidth; Broadband amplifiers; Dual band; Impedance; Power transmission lines; Resonant frequency; Broadband Class E; Doherty amplifier; GaN HEMT; RF power amplifier; efficiency; reactance compensation; transmission line;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2012.2210906
Filename :
6269905
Link To Document :
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