DocumentCode :
1265800
Title :
InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor
Author :
Yan, B.P. ; Hsu, C.C. ; Wang, X.Q. ; Yang, E.S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
Volume :
38
Issue :
6
fYear :
2002
fDate :
3/14/2002 12:00:00 AM
Firstpage :
289
Lastpage :
291
Abstract :
A novel InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor is presented. It features the use of fully strained pseudomorphic GaAs0.94Sb0.06 as the base layer and an InGaP layer as the emitter, which both eliminate misfit dislocations and current blocking, and increase the valence band discontinuity at the InGaP/GaAsSb interface. The device demonstrates a high current gain and a low turn-on voltage
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; InGaP-GaAs0.94Sb0.06-GaAs; InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor; InGaP/GaAsSb interface; current blocking; current gain; emitter layer; misfit dislocations; strained pseudomorphic base layer; turn-on voltage; valence band discontinuity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20020201
Filename :
992640
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1265800
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