• DocumentCode
    1265800
  • Title

    InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor

  • Author

    Yan, B.P. ; Hsu, C.C. ; Wang, X.Q. ; Yang, E.S.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
  • Volume
    38
  • Issue
    6
  • fYear
    2002
  • fDate
    3/14/2002 12:00:00 AM
  • Firstpage
    289
  • Lastpage
    291
  • Abstract
    A novel InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor is presented. It features the use of fully strained pseudomorphic GaAs0.94Sb0.06 as the base layer and an InGaP layer as the emitter, which both eliminate misfit dislocations and current blocking, and increase the valence band discontinuity at the InGaP/GaAsSb interface. The device demonstrates a high current gain and a low turn-on voltage
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; InGaP-GaAs0.94Sb0.06-GaAs; InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor; InGaP/GaAsSb interface; current blocking; current gain; emitter layer; misfit dislocations; strained pseudomorphic base layer; turn-on voltage; valence band discontinuity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020201
  • Filename
    992640
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1265800