Small-signal analysis of 1.3-μm microcavity light-emitting diodes

Author

Landais, P. ; Roycroft, B. ; Shaw, A. ; Depreter, B. ; Moerman, I. ; Hegarty, J.

Author_Institution

Dept. of Phys., Trinity Coll., Dublin, Ireland

Volume

11

Issue

11

fYear

1999

Firstpage

1342

Lastpage

1344

Abstract

The modulation speed of 1.3-μm microcavity light-emitting diodes (MCLEDs) has been measured using a small-signal modulation analysis. A speed of 260 MHz using a 25-μm diameter sample at current density of 10 kA/cm² has been achieved. The carrier confinement has been calculated for several carrier densities in order to investigate the origin of the speed limitation. By comparing the performance of the 1.3-μm MCLEDs with that of the 990-nm devices we conclude that the limiting factor on the speed seems to be a lack of carrier confinement in the quantum wells and not a cavity effect.

Keywords

carrier density; current density; infrared sources; light emitting diodes; micro-optics; micromechanical resonators; optical resonators; 1.3 mum; 1.3-/spl mu/m MCLED; 1.3-/spl mu/m microcavity light-emitting diodes; 25 mum; 990 nm; LED; carrier confinement; cavity effect; current density; limiting factor; modulation speed; quantum wells; small-signal analysis; small-signal modulation analysis; speed limitation; Bandwidth; Carrier confinement; Distributed Bragg reflectors; Fabrication; Indium phosphide; Light emitting diodes; Microcavities; Physics; Recycling; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.803039

Filename

803039