DocumentCode :
1265937
Title :
Small-signal analysis of 1.3-μm microcavity light-emitting diodes
Author :
Landais, P. ; Roycroft, B. ; Shaw, A. ; Depreter, B. ; Moerman, I. ; Hegarty, J.
Author_Institution :
Dept. of Phys., Trinity Coll., Dublin, Ireland
Volume :
11
Issue :
11
fYear :
1999
Firstpage :
1342
Lastpage :
1344
Abstract :
The modulation speed of 1.3-μm microcavity light-emitting diodes (MCLEDs) has been measured using a small-signal modulation analysis. A speed of 260 MHz using a 25-μm diameter sample at current density of 10 kA/cm2 has been achieved. The carrier confinement has been calculated for several carrier densities in order to investigate the origin of the speed limitation. By comparing the performance of the 1.3-μm MCLEDs with that of the 990-nm devices we conclude that the limiting factor on the speed seems to be a lack of carrier confinement in the quantum wells and not a cavity effect.
Keywords :
carrier density; current density; infrared sources; light emitting diodes; micro-optics; micromechanical resonators; optical resonators; 1.3 mum; 1.3-/spl mu/m MCLED; 1.3-/spl mu/m microcavity light-emitting diodes; 25 mum; 990 nm; LED; carrier confinement; cavity effect; current density; limiting factor; modulation speed; quantum wells; small-signal analysis; small-signal modulation analysis; speed limitation; Bandwidth; Carrier confinement; Distributed Bragg reflectors; Fabrication; Indium phosphide; Light emitting diodes; Microcavities; Physics; Recycling; Substrates;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.803039
Filename :
803039
Link To Document :
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