• DocumentCode
    1265940
  • Title

    Memristors With Flexible Electronic Applications

  • Author

    Gergel-Hackett, Nadine ; Tedesco, Joseph L. ; Richter, Curt A.

  • Author_Institution
    Dept. of Chem. & Phys., Mary Baldwin Coll., Staunton, VA, USA
  • Volume
    100
  • Issue
    6
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    1971
  • Lastpage
    1978
  • Abstract
    In addition to the potential for memristors to be used in logic, memory, smart interconnects, and biologically inspired architectures that could transform traditional silicon-based computing, memristors may enable such transformative technologies on physically flexible substrates. The simple structure of a memristor, which generally consists of a thin film of oxide sandwiched between two metal contacts, contributes to its compatibility with existing and future large area flexible electronics. This is especially true considering that recent work has demonstrated the ability for titanium dioxide-based memristors to be deposited from solution at room temperature by using a sol gel technique on a flexible polymer substrate. The integration of memristors with traditional flexible devices (such as thin-film organic, zinc oxide, or amorphous-Si transistors) may enable the realization of a new paradigm in computing technology through lightweight, inexpensive, flexible electronics.
  • Keywords
    flexible electronics; memristors; polymers; sol-gel processing; thin film devices; biologically inspired architectures; flexible electronic applications; flexible polymer substrate; logic architectures; memory architectures; metal contacts; oxide sandwiched thin film; physically flexible substrates; silicon-based computing; smart interconnect architectures; sol gel technique; temperature 293 K to 298 K; thin film; titanium dioxide-based memristors; transformative technologies; Flexible electronics; Memristors; Nonvolatile memory; Polymers; Substrates; Switches; Switching circuits; Flexible electronics; flexible memory; memristor; resistive memory;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2011.2158284
  • Filename
    5942140