Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

Author

Zhukov, A.E. ; Kovsh, A.R. ; Ustinov, V.M. ; Shernyakov, Yu.M. ; Mikhrin, S.S. ; Maleev, N.A. ; Kondrat´eva, E.Yu. ; Livshits, D.A. ; Maximov, M.V. ; Volovik, B.V. ; Bedarev, D.A. ; Musikhin, Yu.G. ; Ledentsov, N.N. ; Kop´ev, P.S. ; Alferov, Z.I. ; Bimber

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

Volume

11

Issue

11

fYear

1999

Firstpage

1345

Lastpage

1347

Abstract

Continuous-wave operation near 1.3 μm or a diode laser based on self-organized quantum dots (QD´s) on a GaAs substrate is demonstrated. Multiple stacking of InAs QD planes covered by thin InGaAs layers allows us to prevent gain saturation and achieve long-wavelength lasing with low threshold current density (90-105 A/cm²) and high output power (2.7 W) at 17/spl deg/C heatsink temperature. It is thus confirmed that QD lasers of this kind are potential candidates to substitute InP-based lasers in optical fiber systems.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; semiconductor quantum dots; 1.3 mum; 17 C; 2.7 W; CW lasers; GaAs; GaAs substrate; InAs QD planes; InGaAs; InP-based lasers; QD lasers; continuous-wave operation; gain saturation; heatsink temperature; high output power; long-wavelength lasing; long-wavelength quantum-dot diode laser; low threshold current density; multiple stacking; optical fiber systems; self-organized quantum dots; thin InGaAs layers; Diode lasers; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Power generation; Quantum dot lasers; Quantum dots; Stacking; Temperature; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.803040

Filename

803040