DocumentCode :
1265997
Title :
Passively mode-locked laser diodes with bandgap-wavelength detuned saturable absorbers
Author :
Kunimatsu, D. ; Arahira, S. ; Kato, Y. ; Ogawa, Y.
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Volume :
11
Issue :
11
fYear :
1999
Firstpage :
1363
Lastpage :
1365
Abstract :
We fabricated monolithic passively mode-locked laser diodes with bandgap-wavelength detuned saturable absorbers using selective growth. The pulsewidth shortened with increasing detuning of the absorber toward shorter wavelengths. For the detuned absorber, the pulsewidth was reduced to 1.2 ps, compared to 2.6 ps for the nondetuned absorber. This originated in broadened mode-locked spectra and reduced absorption recovery time under larger reverse bias voltages for detuned saturable absorbers.
Keywords :
integrated optoelectronics; laser mode locking; laser tuning; optical saturable absorption; semiconductor lasers; 1.2 ps; 2.6 ps; bandgap-wavelength detuned saturable absorbers; broadened mode-locked spectra; detuned absorber; detuned saturable absorbers; increasing detuning; larger reverse bias voltages; monolithic passively mode-locked laser diodes; nondetuned absorber; passively mode-locked laser diodes; pulsewidth; reduced absorption recovery time; selective growth; Absorption; Diode lasers; Epitaxial growth; High speed optical techniques; Laser mode locking; Optical noise; Optical pulse generation; Optical pulses; Space vector pulse width modulation; Ultrafast optics;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.803046
Filename :
803046
Link To Document :
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