Passively mode-locked laser diodes with bandgap-wavelength detuned saturable absorbers

Author

Kunimatsu, D. ; Arahira, S. ; Kato, Y. ; Ogawa, Y.

Author_Institution

Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

11

Issue

11

fYear

1999

Firstpage

1363

Lastpage

1365

Abstract

We fabricated monolithic passively mode-locked laser diodes with bandgap-wavelength detuned saturable absorbers using selective growth. The pulsewidth shortened with increasing detuning of the absorber toward shorter wavelengths. For the detuned absorber, the pulsewidth was reduced to 1.2 ps, compared to 2.6 ps for the nondetuned absorber. This originated in broadened mode-locked spectra and reduced absorption recovery time under larger reverse bias voltages for detuned saturable absorbers.

Keywords

integrated optoelectronics; laser mode locking; laser tuning; optical saturable absorption; semiconductor lasers; 1.2 ps; 2.6 ps; bandgap-wavelength detuned saturable absorbers; broadened mode-locked spectra; detuned absorber; detuned saturable absorbers; increasing detuning; larger reverse bias voltages; monolithic passively mode-locked laser diodes; nondetuned absorber; passively mode-locked laser diodes; pulsewidth; reduced absorption recovery time; selective growth; Absorption; Diode lasers; Epitaxial growth; High speed optical techniques; Laser mode locking; Optical noise; Optical pulse generation; Optical pulses; Space vector pulse width modulation; Ultrafast optics;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.803046

Filename

803046