Measurement of semiconductor laser gain and dispersion curves utilizing Fourier transforms of the emission spectra

Author

Hofstetter, Daniel ; Faist, Jérôme

Author_Institution

Inst. de Phys., Neuchatel Univ., Switzerland

Volume

11

Issue

11

fYear

1999

Firstpage

1372

Lastpage

1374

Abstract

A new technique for the measurement of semiconductor laser gain and dispersion spectra is presented. The technique is based on an analysis of the subthreshold emission spectrum by Fourier transforms. Applications of this method to AlGaInP-based interband laser diodes and mid-infrared intersubband quantum cascade lasers are discussed. A good agreement between the measured dispersion of the refractive index and tabulated values in the literature was found.

Keywords

Fourier transform optics; III-V semiconductors; aluminium compounds; dispersion relations; gallium compounds; indium compounds; infrared sources; infrared spectra; quantum well lasers; AlGaInP; AlGaInP-based interband laser diodes; Fourier transforms; dispersion curves; dispersion spectra; emission spectra; mid-infrared intersubband quantum cascade lasers; refractive index dispersion; semiconductor laser gain measurement; subthreshold emission spectrum; tabulated values; Diode lasers; Dispersion; Fourier transforms; Gain measurement; Quantum cascade lasers; Refractive index; Resonance; Semiconductor lasers; Spontaneous emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.803049

Filename

803049