Title :
GaAs/GaAlAs graded index separate confinement single quantum well single-mode waveguide electroabsorption light modulator
Author :
Zhu, L.D. ; Xiong, F.K. ; Wang, C.M. ; Chen, Z.H. ; Hsie, Y.L. ; Feak, G.A.B. ; Ballantyne, J.M.
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
fDate :
10/1/1991 12:00:00 AM
Abstract :
A GaAs/GaAlAs graded-index separate confinement single quantum well heterostructure single-mode ridge waveguide electroabsorption modulator was fabricated and investigated. For the modulator with a quantum well width of 100 Å and device length of 700 μm and on/off ratio of 29.7 dB , and estimated absorption insertion loss of 3 dB was obtained for TE polarised light with wavelength 8650 Å; and for TM polarisation the on/off ratio was 28.5 dB. With a switching voltage of 1 V, an on/off ratio of 15 dB was achieved. Photocurrent spectra exhibited a red shift of 600 Å of the absorption edge when the voltage applied to the PIN diode was varied from 0.5 to -7 V. The corresponding shift of the room temperature exciton peak energy was 96 meV
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; gradient index optics; integrated optics; optical modulation; optical waveguides; 1 V; 100 Å; 3 dB; 700 micron; 8650 Å; GaAs-GaAlAs; PIN diode; TE polarised light; TM polarisation; absorption edge; absorption insertion loss; electroabsorption light modulator; energy shifts; graded index; on/off ratio; photocurrent spectra; quantum well width; red shift; ridge waveguide; room temperature exciton peak energy; semiconductors; separate confinement; single quantum well; single-mode waveguide; switching voltage;
Journal_Title :
Optoelectronics, IEE Proceedings J
