DocumentCode :
1266261
Title :
Internal Electric Field Estimation, Charge Transport and Detector Performance of As-Grown {\\rm Cd}_{0.9}{\\rm Zn}_{0.1}{\\rm Te:In} by THM
Author :
Roy, Utpal Narayan ; Weiler, Stephen ; Stein, Juergen ; Groza, Michael ; Buliga, Vladimir ; Burger, Arnold
Author_Institution :
ICx Radiat., Oak Ridge, TN, USA
Volume :
58
Issue :
4
fYear :
2011
Firstpage :
1949
Lastpage :
1952
Abstract :
In this article we report the evaluation of thick (up to 10 mm) as-grown Cd0.9Zn0.1Te(CZT):In detectors fabricated from ingots grown by traveling heater method (THM). The crystals were investigated by mapping the electron mobility (μe), (μτ)e and the internal electric field of as-grown CZT samples. The detector performance was also evaluated in co-planar grid geometry. The excellent (μτ)e value and the detector performance of 10 mm thick as-grown detectors is the indication that the THM technique can be employed successfully to fabricate the detectors directly from the as-grown boule at substantially lower cost.
Keywords :
cadmium compounds; electron mobility; semiconductor counters; Cd0.9Zn0.1Te; charge transport; detector performance; electron mobility; internal electric field estimation; traveling heater method; Annealing; Crystals; Detectors; Estimation; Radiation detectors; Residual stresses; CdZnTe; charge transport; radiation detector;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2011.2159389
Filename :
5942186
Link To Document :
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