Title :
Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVD
Author :
Yan, B.P. ; Hsu, C.C. ; Wang, X.Q. ; Yang, E.S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
fDate :
4/1/2002 12:00:00 AM
Abstract :
A novel InGaP/GaAs/sub 0.92/Sb/sub 0.08//GaAs double heterojunction bipolar transistor (DHBT) with low turn-on voltage has been fabricated. The turn-on voltage of the DHBT is typically 150 mV lower than that of the conventional InGaP/GaAs HBT, indicating that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs. A current gain of 50 has been obtained for the InGaP/GaAs/sub 0.92/Sb/sub 0.08//GaAs DHBT. The results show that InGaP/GaAsSb/GaAs DHBTs have a great potential for reducing operating voltage and power dissipation.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; low-power electronics; semiconductor device measurement; 0.935 V; DC performance; DHBT; GaAsSb base material; Gummel plots; InGaP-GaAs/sub 0.92/Sb/sub 0.08/-GaAs; MOCVD growth; collector current density; common-emitter I-V characteristics; current gain; emitter-base voltage; low turn-on voltage InGaP/GaAsSb/GaAs double HBTs; operating voltage; power dissipation; Circuits; DH-HEMTs; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; MOCVD; Narrowband; Photonic band gap; Power dissipation;
Journal_Title :
Electron Device Letters, IEEE
