Title :
Add-on Cu/SiLK/sup TM/ module for high Q inductors
Author :
Jenei, Snezana ; Decoutere, Stefaan ; Maex, Karen ; Nauwelaers, Bart
Author_Institution :
IMEC, Leuven, Belgium
fDate :
4/1/2002 12:00:00 AM
Abstract :
Thick Cu single damascene inductors are integrated on top of a standard aluminum three-levels-of-metal (3LM) back-end of line (BEOL) silicon process. The obtained Q factors are more than four times higher than Q factors of the inductors of the same geometry processed in the Al 3LM BEOL. For an inductor of 3 nH designed for 2-GHz frequency applications and fabricated in thick Cu/SiLK/sup TM1/ as an add-on module, a Q factor of /spl sim/24 is reached. A compact two-section lumped element SPICE model is proposed and validated for both inductors in thick Cu/SiLK/sup TM/ and inductors in standard aluminum 3LM BEOL.
Keywords :
Q-factor; SPICE; UHF integrated circuits; copper; inductors; integrated circuit design; integrated circuit metallisation; integrated circuit modelling; modules; 2 GHz; 2-GHz frequency applications; Cu-Al; Q factor; RF circuit design; RFIC; add-on Cu/SiLK module; add-on module; back-end of line process; deep sub-micron digital CMOS processing; high Q inductors; radio-frequency components; thick Cu single damascene inductors; three-levels-of-metal BEOL silicon process; two-section lumped element SPICE model; Aluminum; BiCMOS integrated circuits; CMOS technology; Copper; Inductors; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Silicon; Spirals;
Journal_Title :
Electron Device Letters, IEEE
