• DocumentCode
    1266368
  • Title

    Plasma-etch technology

  • Author

    Cotler, Tina J. ; Elta, Michael E.

  • Author_Institution
    Michigan Univ., Ann Arbor, MI, USA
  • Volume
    6
  • Issue
    4
  • fYear
    1990
  • fDate
    7/1/1990 12:00:00 AM
  • Firstpage
    38
  • Lastpage
    43
  • Abstract
    An overview is given of plasma-etch processes used in microelectronics fabrication for pattern transfer, and the main requirements for plasma-assisted etching are outlined. The two primary etch mechanisms-chemical and physical-are examined. Issues involved in bringing plasma processes to the factory are discussed. Monitoring and controlling plasma processes are considered.<>
  • Keywords
    process control; semiconductor technology; sputter etching; etch mechanisms; factory; microelectronics fabrication; monitoring; pattern transfer; plasma processes; plasma-assisted etching; plasma-etch processes; process control; Anisotropic magnetoresistance; Circuits; Etching; Gases; Plasma applications; Plasma chemistry; Plasma devices; Plasma materials processing; Polymer films; Silicon;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/101.59429
  • Filename
    59429