Abnormal junction profile of silicided p/sup +//n shallow junctions: a leakage mechanism

Author

Choi, Chel-Jong ; Seong, Tae-Yeon ; Lee, Key-Min ; Lee, Joo-Hyoung ; Park, Young-Jin ; Lee, Hi-Deok

Author_Institution

Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., South Korea

Volume

23

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

188

Lastpage

190

Abstract

The leakage mechanism in p/sup +//n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions.

Keywords

diffusion; doping profiles; etching; ion implantation; isolation technology; leakage currents; p-n junctions; semiconductor device metallisation; semiconductor process modelling; transmission electron microscopy; 0.15 micron; Co salicidation; Co silicidation; CoSi/sub 2/; SIMS depth profiles; Si:P-Si:B; TEM; TSUPREM-4 simulation; abnormal junction profile; active region edge; dopant profiles; leakage current source; leakage mechanism; selective chemical etching; shallow trench isolation; silicided p/sup +//n shallow junctions; source/drain implantation; transient enhanced diffusion; Chemical processes; Etching; Leakage current; Materials science and technology; Rapid thermal annealing; Silicidation; Silicides; Stress; Substrates; Transmission electron microscopy;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.992834

Filename

992834