DocumentCode
1266441
Title
VLSI implementation of ART1 memories
Author
Tsay, Suan W. ; Newcomb, Robert W.
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Volume
2
Issue
2
fYear
1991
fDate
3/1/1991 12:00:00 AM
Firstpage
214
Lastpage
221
Abstract
A hardware implementation of long-term memory and short-term memory for binary input adaptive resonance theory (ART1) neural networks is presented. This implementation is based on chemical-electrical interactions in real neurons which are known to control axon release of chemical materials which in turn modulate the conductances of synapses. An axon-synapse-tree structure is introduced to achieve bottom-up long-term memory. The tree is realized by voltage modulation of synapse conductances. VLSI circuits are developed to realize the different functions of ART memories
Keywords
CMOS integrated circuits; VLSI; adaptive systems; analogue storage; neural nets; trees (mathematics); ART1; CMOS; VLSI; analogue storage; axon-synapse-tree structure; binary input adaptive resonance theory; chemical-electrical interactions; long-term memory; neural networks; short-term memory; synapse conductances; voltage modulation; Chemicals; Circuits; Conducting materials; Nerve fibers; Neural network hardware; Neural networks; Neurons; Resonance; Very large scale integration; Voltage;
fLanguage
English
Journal_Title
Neural Networks, IEEE Transactions on
Publisher
ieee
ISSN
1045-9227
Type
jour
DOI
10.1109/72.80330
Filename
80330
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