Title :
VLSI implementation of ART1 memories
Author :
Tsay, Suan W. ; Newcomb, Robert W.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
A hardware implementation of long-term memory and short-term memory for binary input adaptive resonance theory (ART1) neural networks is presented. This implementation is based on chemical-electrical interactions in real neurons which are known to control axon release of chemical materials which in turn modulate the conductances of synapses. An axon-synapse-tree structure is introduced to achieve bottom-up long-term memory. The tree is realized by voltage modulation of synapse conductances. VLSI circuits are developed to realize the different functions of ART memories
Keywords :
CMOS integrated circuits; VLSI; adaptive systems; analogue storage; neural nets; trees (mathematics); ART1; CMOS; VLSI; analogue storage; axon-synapse-tree structure; binary input adaptive resonance theory; chemical-electrical interactions; long-term memory; neural networks; short-term memory; synapse conductances; voltage modulation; Chemicals; Circuits; Conducting materials; Nerve fibers; Neural network hardware; Neural networks; Neurons; Resonance; Very large scale integration; Voltage;
Journal_Title :
Neural Networks, IEEE Transactions on
