1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor

Author

Olsson, J. ; Rorsman, Niklas ; Vestling, L. ; Fager, C. ; Ankarcrona, J. ; Zirath, H. ; Eklund, K.-H.

Author_Institution

Angstrom Lab., Uppsala Univ., Sweden

Volume

23

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

206

Lastpage

208

Abstract

We present state-of-the-art performance, in terms of output power density, for an RF-power LDMOS transistor. The novel device structure has a dual-layer RESURF of the drift region, which allows for a sub-μm channel length and a high breakdown voltage of 110 V. The output power density is more than 2 W/mm at 1 GHz and a V/sub DS/=70 V, with a stable gain of 23 dB at V/sub DS/=50 V. At 3.2 GHz the power density is over 1 W/mm at V/sub DS/=50 V and 0.6 W/mm at V/sub DS/=28 V. These results are to our knowledge the best ever for silicon power MOSFETs.

Keywords

elemental semiconductors; microwave field effect transistors; microwave power transistors; power MOSFET; silicon; 1 GHz; 110 V; 28 V; 3.2 GHz; 50 V; 70 V; LDMOS transistor; RF; RF-power LDMOS transistor; Si; Si power MOSFET; breakdown voltage 110 V; drift region; dual-layer RESURF; output power density; Density measurement; Electromagnetic heating; Laboratories; MOSFETs; Microwave devices; Microwave transistors; Power generation; Power measurement; Radio frequency; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.992840

Filename

992840