• DocumentCode
    1266555
  • Title

    Microwave performance of pulse-doped-heterostructure GaInAs MESFETs

  • Author

    Fathimulla, A. ; Hier, H. ; Abrahams, J.

  • Author_Institution
    Allied/Bendix Aerospace Technol. Center, Columbia, MD
  • Volume
    24
  • Issue
    2
  • fYear
    1988
  • fDate
    1/21/1988 12:00:00 AM
  • Firstpage
    93
  • Lastpage
    94
  • Abstract
    A pulse-doped-heterostructure GaInAs MESFET having a 0.7 μm gate length with a transconductance of 270 mS/mm has been fabricated. Maximum stable gains of 14 dB at 26.5 GHz, which extrapolates to an fmax of over 100 GHz, were measured
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; solid-state microwave devices; 0.5 to 100 GHz; 0.7 micron; 14 dB; 26.5 GHz; 270 mS; EHF; GaInAs-AlInAs; III-V semiconductors; MESFET; SHF; microwave devices; pulse-doped-heterostructure; stable gains; submicron gate length; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1266555