Nonuniform and latchup current detection in lateral conductivity modulated FETs

Author

Sin, Johnny K O ; Mukherjee, Satyen

Author_Institution

North American Philips Corp., Briarcliff Manor, NY, USA

Volume

11

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

250

Lastpage

252

Abstract

Three-dimensional effects on current distribution in lateral conductivity modulated power transistors such as the lateral insulated-gate bipolar transistor (LIGBT) are studied using the infrared microscopy technique. Nonuniform current distribution and the location of the latchup sites in these devices have been identified. This provides experimental insights into the design and optimization of these high-voltage power transistors. For optimized p/sup +/ anode LIGBT devices with a breakdown voltage of 600 V, a current density of 200 A/cm/sup 2/ at a forward voltage of 2 V, which is comparable to the DMOS IGBT, and a latchup current density above 800 A/cm/sup 2/ have been obtained.<>

Keywords

bipolar transistors; current density; current distribution; infrared imaging; insulated gate field effect transistors; power transistors; semiconductor device testing; 3D effects; 600 V; breakdown voltage; conductivity modulated FET; current density; current distribution; infrared microscopy technique; latchup current detection; lateral conductivity modulated power transistors; lateral insulated-gate bipolar transistor; p/sup +/ anode LIGBT devices; Anodes; Breakdown voltage; Conductivity; Current density; Current distribution; Design optimization; Insulated gate bipolar transistors; Insulation; Microscopy; Power transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.55270

Filename

55270