DocumentCode :
1266683
Title :
Technology and reliability constrained future copper interconnects. II. Performance implications
Author :
Kapur, Pawan ; Chandra, Gaurav ; McVittie, James P. ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
Volume :
49
Issue :
4
fYear :
2002
fDate :
4/1/2002 12:00:00 AM
Firstpage :
598
Lastpage :
604
Abstract :
For pt. I see ibid., vol.49, no.4, pp.590-7 (2002). This work extends the realistic resistance modeling of on-chip copper interconnects to assess its impact on key interconnect performance metrics. As quantified in part I of this work, the effective resistivity of copper is not only significantly larger than its ideal, bulk value but also highly dependent on technology and reliability constraints. Performance is quantified under various technological conditions in the future. In particular, wire delay is extensively addressed. Further, the impact of optimal repeater insertion to improve these parameters is also studied using realistic resistance trends. The impact of technologically constrained resistance on power penalty arising from repeater insertion is briefly addressed. Where relevant, aforementioned results are contrasted with those obtained using ideal copper resistivity
Keywords :
copper; crosstalk; delays; electrical resistivity; inductance; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; repeaters; technological forecasting; Cu; Cu interconnects; crosstalk; effective resistivity; future performance; interconnect latency; interconnect performance metrics; interconnect resistance model; optimal repeater insertion; power consumption; power penalty; reliability constraints; repeater power; resistance modeling; signal transmission reliability; technological conditions; technology constraints; wire delay; wire inductance; Added delay; Capacitance; Conductivity; Copper; Dielectric materials; Inductance; Measurement; Repeaters; Transistors; Wire;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.992868
Filename :
992868
Link To Document :
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