Title :
Macroscopic simulation of quantum mechanical effects in 2-D MOS devices via the density gradient method
Author :
Connelly, Daniel ; Yu, Zhiping ; Yergeau, Dan
Author_Institution :
Acorn Technol., Palo Alto, CA, USA
fDate :
4/1/2002 12:00:00 AM
Abstract :
Here, for the first time, are presented results of two-dimensional (2-D) simulations of metal-oxide-semiconductor (MOS) devices, including quantum mechanical modeling throughout the entire device region, calculated using the density gradient method. The importance of quantum mechanical modeling of the entire device structure, including the gate, source, drain, and channel, is demonstrated through one-dimensional (1-D) examples and through analysis of double and single-gated fully-depleted silicon-on-insulator (SOI) devices. A comparison of density gradient results with literature data is also presented
Keywords :
MIS devices; MOS capacitors; MOSFET; capacitance; gradient methods; quantum theory; semiconductor device models; silicon-on-insulator; simulation; 2D simulations; MOS devices; SOI MOSFET; Si; capacitance; density gradient method; double single-gated SOI devices; fully-depleted SOI devices; macroscopic simulation; quantum mechanical effects; quantum mechanical modeling; semiconductor device modeling; single-gated SOI devices; two-dimensional simulations; Charge carrier processes; Computational modeling; Electron mobility; Gradient methods; MOS devices; Quantum computing; Quantum mechanics; Silicon on insulator technology; Statistics; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
