Title :
Status and prospects for SiC power MOSFETs
Author :
Cooper, James A., Jr. ; Melloch, Michael R. ; Singh, Ranbir ; Agarwal, Anant ; Palmour, John W.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
4/1/2002 12:00:00 AM
Abstract :
SiC electronic device technology has made rapid progress during the past decade. In this paper, we review the evolution of SiC power MOSFETs between 1992 and the present, discuss the current status of device development, identify the critical fabrication issues, and assess the prospects for continued progress and eventual commercialization
Keywords :
annealing; carrier mobility; field effect transistor switches; interface states; inversion layers; power MOSFET; power semiconductor switches; reviews; semiconductor device breakdown; semiconductor device reliability; silicon compounds; wide band gap semiconductors; DMOSFET; LDMOSFETs; SiC; SiC power MOSFETs; UMOSFETs; blocking voltages; fabrication issues; field effect transistors; interface state density; inversion layer mobility; oxide reliability; power switching devices; review; vertical trench MOSFETs; Chemicals; Electron mobility; Etching; Fabrication; MOSFETs; Oxidation; Semiconductivity; Semiconductor materials; Silicon carbide; Surface resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
