Title :
Effects of wave function penetration into the gate-oxide on self-consistent modeling of scaled MOSFETs
Author :
Kauser, Mhammad Zahed ; Hasan, Md Sayed ; Haque, Anisul
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fDate :
4/1/2002 12:00:00 AM
Abstract :
Effects of wave function penetration into gate-oxide on properties of scaled nMOS devices in deep submicron regime are studied, taking into account the penetration effects on the solutions of both Schrodinger´s and Poisson´s equations. Numerical results show that penetration effects on properties of inversion layers become more important with scaling down of device dimensions. These effects are also more pronounced at strong inversion
Keywords :
MOSFET; Poisson equation; Schrodinger equation; inversion layers; semiconductor device models; Poisson´s equation; Schrodinger´s equation; deep submicron regime; device dimension scaling; gate-oxide wave function penetration; inversion layers; penetration effects; scaled MOSFETs; self-consistent modeling; Boundary conditions; Electrons; H infinity control; MOS devices; MOSFETs; Poisson equations; Quantization; Quantum capacitance; Schrodinger equation; Wave functions;
Journal_Title :
Electron Devices, IEEE Transactions on
