DocumentCode
1266805
Title
On the transport equations in popular commercial device simulators
Author
Levinshtein, M.E. ; Mnatsakanov, T.T.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Volume
49
Issue
4
fYear
2002
fDate
4/1/2002 12:00:00 AM
Firstpage
702
Lastpage
703
Abstract
The transport formulation used in many commercial semiconductor device simulators (for example DESSIS, ATLAS, and MEDICI) does not allow accurate modeling of electron-hole scattering in bipolar semiconductor devices such as diodes, bipolar junction transistors, and thyristors. This is especially important at low temperatures and/or high current densities
Keywords
bipolar transistors; current density; digital simulation; minority carriers; semiconductor device models; semiconductor diodes; thyristors; ATLAS; DESSIS; MEDICI; bipolar junction transistors; bipolar semiconductor devices; commercial semiconductor device simulators; current densities; diodes; electron-hole scattering; thyristors; transport equations; Charge carrier processes; Current density; Equations; Insulated gate bipolar transistors; Medical simulation; Scattering; Semiconductor devices; Semiconductor diodes; Temperature; Thyristors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.992884
Filename
992884
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