Title :
High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric
Author :
Su, N.C. ; Wang, S.J. ; Chin, Albert
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-kappa-value HfLaO gate dielectric. Good characteristics were achieved including a low VT of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm2/ Vmiddots, and large I on/I off ratio of 5 times 107. These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.
Keywords :
gallium compounds; hafnium compounds; indium compounds; lanthanum compounds; power electronics; thin film transistors; zinc compounds; HfLaO; InGaZnO; gate dielectric; high-performance thin-film transistors; high-switching-speed application; low-power application; low-voltage-driven amorphous indium-gallium-zinc oxide transistor; Amorphous indium–gallium–zinc oxide (a-IGZO); HfLaO; equivalent oxide thickness; high-$kappa$; thin-film transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2033392
