• DocumentCode
    1267045
  • Title

    Air-Spacer MOSFET With Self-Aligned Contact for Future Dense Memories

  • Author

    Park, Jemin ; Hu, Chenming

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
  • Volume
    30
  • Issue
    12
  • fYear
    2009
  • Firstpage
    1368
  • Lastpage
    1370
  • Abstract
    An air-spacer transistor with self-aligned contact (SAC) is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. A three-dimensional mixed-mode simulation shows that this transistor structure has 35% smaller area, 10% faster speed, and 18% lower switching energy than a non-SAC MOSFET.
  • Keywords
    MOSFET; random-access storage; SAC plug; air-spacer MOSFET; dense memories; nitride spacer; self-aligned contact; three-dimensional mixed-mode simulation; $RC$ delay; Air gap technology; air-spacer technology; high speed; low-$k$ process;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2034032
  • Filename
    5313894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1267045