An On-Chip Electromagnetic Bandgap Structure using an On-Chip Inductor and a MOS Capacitor

Author

Hwang, Chulsoon ; Shim, Yujeong ; Koo, Kyoungchoul ; Kim, Myunghoi ; Pak, Jun So ; Kim, Joungho

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

Volume

21

Issue

8

fYear

2011

Firstpage

439

Lastpage

441

Abstract

An on-chip electromagnetic bandgap (EBG) structure using a CMOS process is proposed. The proposed structure is the first EBG structure devised to suppress simultaneous switching noise coupling in an on-chip power distribution network (PDN). The on-chip EBG structure utilizes an on-chip inductor and a MOS capacitor to generate a stopband with a range of several GHz in an extremely small size; thus, the EBG structure can be embedded in on-chip PDNs. The proposed on-chip EBG structure was fabricated using a MagnaChip 0.18 μm CMOS process, and we successfully verified a 9.24 GHz stopband, from 1.26 to 10.5 GHz, with an isolation level of 50 dB.

Keywords

CMOS integrated circuits; MOS capacitors; circuit noise; inductors; interference suppression; photonic band gap; CMOS process; MOS capacitor; MagnaChip; frequency 1.26 GHz to 10.5 GHz; on-chip EBG structure; on-chip electromagnetic bandgap; on-chip inductor; on-chip power distribution network; size 0.18 mum; switching noise coupling suppression; Capacitors; Inductors; MOS devices; Metamaterials; Noise; Periodic structures; System-on-a-chip; Decoupling capacitor; electromagnetic bandgap (EBG); on-chip EBG structure; simultaneous switching noise (SSN);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2011.2158534

Filename

5944988