Title :
High Power Digitally-Controlled SOI CMOS Attenuator With Wide Attenuation Range
Author :
Jeong, Jinho ; Pornpromlikit, Sataporn ; Scuderi, Antonino ; Presti, Calogero ; Asbeck, Peter
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Abstract :
An attenuator is presented in a 0.13 μm silicon-on-insulator (SOI) CMOS technology, to be used for power control of RF wireless transmitters. The design is based on a T-network consisting of two series switches and 63 shunt switches. A gate switching technique is utilized in the series switches for high power handling and high isolation. Measurements at 1.88 GHz show that the minimum insertion loss is as low as 0.6 dB and maximum attenuation is 55.3 dB with worst input return loss of 8.1 dB. The attenuation can be digitally controlled in steps of around 1 dB. The 1 dB gain compression point is as high as 21.0 dBm in the through mode.
Keywords :
CMOS integrated circuits; UHF filters; attenuators; digital control; elemental semiconductors; power control; power integrated circuits; radio transmitters; silicon; silicon-on-insulator; switches; RF wireless transmitter; Si; T-network design; frequency 1.88 GHz; gain 1 dB; gate switching technique; high power digitally-controlled SOI CMOS attenuator; high power handling; loss 8.1 dB; minimum insertion loss; power control; series switch; shunt switch; silicon-on-insulator CMOS technology; size 0.13 mum; wide attenuation range; Attenuation; Attenuators; CMOS integrated circuits; FETs; Insertion loss; Logic gates; Loss measurement; Attenuator; power amplifier (PA); silicon-on-insulator (SOI) CMOS; switch;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2011.2160160
