• DocumentCode
    1267234
  • Title

    Monolithic integration of an InP/InGaAs four-channel transimpedance optical receiver array

  • Author

    Lee, W.S. ; Spear, D.A.H. ; Dawe, P.J.G. ; Bland, S.W.

  • Author_Institution
    STC Technol. Ltd., Harlow, UK
  • Volume
    26
  • Issue
    22
  • fYear
    1990
  • Firstpage
    1833
  • Lastpage
    1834
  • Abstract
    Fully functional four-channel transimpedance receiver array OEICs have been fabricated on 2" diameter InP substrates. Each receiver channel has a bandwidth of 200 MHz and an average input equivalent noise current of around 6 pA/ square root (Hz). The array chip is 3.7 mm*3.2 mm in size and contains 88 components. This is believed to represent the highest level of optoelectronic integration yet reported on InP.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; receivers; 200 MHz; InGaAs-InP; InP; OEICs; average input equivalent noise current; four-channel transimpedance optical receiver array; optoelectronic integration;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901179
  • Filename
    59450