Manufacturing of solder bumps with Cu/Ta/Cu as under bump metallurgy

Author

Lin, Kwang-Lung ; Liu, Ya-Te

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

22

Issue

4

fYear

1999

fDate

11/1/1999 12:00:00 AM

Firstpage

580

Lastpage

585

Abstract

This study investigated the feasibility of the multilayer Cu/Ta/Cu under bump metallurgy (UBM), deposited on AlN/Si where AlN is a thin film. An interdiffusion study found that Ta is an appropriate diffusion barrier layer for the investigated solder bump structure. The temperature profiles and the flux compositions for solder reflow were also investigated. The flux activators investigated include succinic acid, adipic acid, stearic acid, dimethylamine hydrochloride, and diethylamine hydrochloride. Among these, succinic acid was the most appropriate in terms of wetting and cleaning

Keywords

aluminium compounds; chemical interdiffusion; copper; diffusion barriers; electroplating; flip-chip devices; reflow soldering; silicon; sputter deposition; surface cleaning; tantalum; wetting; Cu-Ta-Cu-AlN-Si; adipic acid; cleaning; diethylamine hydrochloride; diffusion barrier layer; dimethylamine hydrochloride; flux activators; flux compositions; interdiffusion study; solder bumps; stearic acid; succinic acid; temperature profiles; under bump metallurgy; wetting; Conducting materials; Conductive films; Flip chip; Manufacturing; Passivation; Semiconductor thin films; Sputtering; Substrates; Temperature distribution; Thermal conductivity;

fLanguage

English

Journal_Title

Advanced Packaging, IEEE Transactions on

Publisher

ieee

ISSN

1521-3323

Type

jour

DOI

10.1109/6040.803449

Filename

803449