Title : 
Reduction of AlGaAs Heterostructure High-Index-Contrast Ridge Waveguide Scattering Loss by Sidewall Smoothing Through Oxygen-Enhanced Wet Thermal Oxidation
         
        
            Author : 
Seibert, Christopher S. ; Hall, Douglas C. ; Liang, Di ; Shellenbarger, Zane A.
         
        
            Author_Institution : 
Electr. Eng. Dept., Univ. of Notre Dame, Notre Dame, IN, USA
         
        
        
        
        
        
        
            Abstract : 
We demonstrate the efficacy of oxidation smoothing of sidewall roughness in high-index-contrast AlGaAs heterostructure ridge waveguides via oxygen-enhanced nonselective wet thermal oxidation for reducing scattering loss. Single-mode waveguides of core widths between 1.5 and 2.2 ??m are fabricated using both the inward growth of a ~ 600-nm sidewall-smoothing native oxide outer cladding and, for comparison, encapsulation of an unoxidized etched ridge with a ~ 600-nm deposited silicon oxide cladding layer. On average, measured loss coefficients are reduced by a factor of 2 with the oxidation smoothing process.
         
        
            Keywords : 
aluminium compounds; etching; gallium arsenide; optical losses; optical waveguides; oxidation; ridge waveguides; semiconductor heterojunctions; AlGaAs; loss coefficients; ridge waveguide; scattering loss; semiconductor heterostructure; sidewall smoothing; single-mode waveguides; size 1.55 mum to 2.2 mum; wet thermal oxidation; Optical losses; optical scattering; oxidation; ridge waveguides (RWGs);
         
        
        
            Journal_Title : 
Photonics Technology Letters, IEEE
         
        
        
        
        
            DOI : 
10.1109/LPT.2009.2035328